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Philips Semiconductors                                                                                        Product specification

TrenchMOSTM transistor                                                                                          BUK9605-30A
Logic level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL                PARAMETER                                MAX.            UNIT
level field-effect power transistor in a
plastic envelope suitable for surface          VDS                   Drain-source voltage                      30                V
mounting. Using 'trench' technology            ID                    Drain current (DC)                        75                A
the device features very low on-state          Ptot                  Total power dissipation                  230               W
resistance. It is intended for use in          Tj                    Junction temperature                     175               

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