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                     BUK9E06-55A
                     N-channel TrenchMOS logic level FET
                     Rev. 04 -- 31 May 2010                                                  Product data sheet



1. Product profile

          1.1 General description
              Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. This product has been designed and qualified to
              the appropriate AEC standard for use in automotive critical applications.

          1.2 Features and benefits
                     Low conduction losses due to low                    Suitable for logic level gate drive
                     on-state resistance                                 sources
                     Q101 compliant                                      Suitable for thermally demanding
                                                                         environments due to 175 

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