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                              BUK9Y11-30B
                              N-channel TrenchMOS logic level FET
                              Rev. 01 -- 30 August 2007                                        Product data sheet




1. Product profile

                      1.1 General description
                          N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package
                          using NXP High-Performance Automotive (HPA) TrenchMOS technology.

                      1.2 Features
                          I Very low on-state resistance                I Q101 compliant
                          I 175 

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