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Philips Semiconductors                                                                       Product specification

PowerMOS transistor                                                                          BUK102-50GS
TOPFET

DESCRIPTION                             QUICK REFERENCE DATA
Monolithic temperature and              SYMBOL     PARAMETER                                        MAX.    UNIT
overload protected power MOSFET
in a 3 pin plastic envelope, intended   VDS        Continuous drain source voltage                   50       V
as a general purpose switch for         ID         Continuous drain current                          50       A
automotive systems and other            PD         Total power dissipation                          125      W
applications.                           Tj         Continuous junction temperature                  150      

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