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Philips Semiconductors                                                                            Product specification

PowerMOS transistor                                                                               BUK110-50GS
TOPFET

DESCRIPTION                        QUICK REFERENCE DATA
Monolithic temperature and         SYMBOL                PARAMETER                                       MAX.    UNIT
overload protected power MOSFET
in a 3 pin plastic surface mount   VDS                   Continuous drain source voltage                  50       V
envelope, intended as a general    ID                    Continuous drain current                         50       A
purpose switch for automotive      PD                    Total power dissipation                         125      W
systems and other applications.    Tj                    Continuous junction temperature                 150      

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