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Philips Semiconductors                                                                        Objective specification

PowerMOS transistor                                                                             BUK113-50DL
Logic level TOPFET

DESCRIPTION                           QUICK REFERENCE DATA
Monolithic overload protected logic   SYMBOL        PARAMETER                                   MIN.      MAX. UNIT
level power MOSFET in a surface
mount plastic envelope, intended as   VDS           Continuous drain source voltage               -        50       V
a general purpose switch for
automotive systems and other          ID            Drain current limiting                       4         8        A
applications.
                                      PD            Total power dissipation                       -        4        W
APPLICATIONS
                                      Tj            Continuous junction temperature               -       150       

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