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Philips Semiconductors                                                                     Product specification

Silicon Diffused Power Transistor                                                                  BUT11AF


GENERAL DESCRIPTION
High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated
mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

QUICK REFERENCE DATA
 SYMBOL       PARAMETER                                 CONDITIONS                         TYP.   MAX.      UNIT
 VCESM        Collector-emitter voltage peak value      VBE = 0 V                           -      1000      V
 VCEO         Collector-emitter voltage (open base)                                         -       450      V
 IC           Collector current (DC)                                                        -        5       A
 ICM          Collector current peak value                                                  -       10       A
 Ptot         Total power dissipation                   Ths  25 

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