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Philips Semiconductors                                                                      Product specification

 Silicon Diffused Power Transistor                                                                         BUW14


GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.

QUICK REFERENCE DATA
 SYMBOL          PARAMETER                                   CONDITIONS                   TYP.     MAX.      UNIT
 VCESM           Collector-emitter voltage peak value        VBE = 0 V                       -     1000       V
 VCEO            Collector-emitter voltage (open base)                                       -      450       V
 IC              Collector current (DC)                                                      -      0.5       A
 ICM             Collector current peak value                                                -       1        A
 Ptot            Total power dissipation                     Tmb  60 

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