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bux86p_87p_1


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Philips Semiconductors                                                                                    Product specification

 Silicon Diffused Power Transistor                                                                                        BUX86P
                                                                                                                          BUX87P


GENERAL DESCRIPTION
High voltage, high speed glass passivated npn power transistors in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.

QUICK REFERENCE DATA
 SYMBOL          PARAMETER                                      CONDITIONS                    TYP.          MAX.               UNIT
                                                                                               BUX        86P         87P
 VCESM           Collector-emitter voltage peak value           VBE = 0 V                       -         800         1000       V
 VCEO            Collector-emitter voltage (open base)                                          -         400          450       V
 VCESAT          Collector-emitter saturation voltage           IC = 0.2 A; IB = 20 mA           -               1              V
 IC              Collector current (DC)                                                          -              0.5             A
 ICM             Collector current peak value                                                    -               1              A
 Ptot            Total power dissipation                        Tmb  25



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