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Philips Semiconductors Product specification Silicon Diffused Power Transistor BUX87-1100 GENERAL DESCRIPTION High voltage, high speed,low capacitance npn power transistor in a SOT78 envelope intended for use in the dynamic focus circuit of televisions and monitors. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 1100 V VCEO Collector-emitter voltage (open base) - 700 V IC Collector current (DC) - 0.5 A ICM Collector current peak value - 1 A Ptot Total power dissipation Tmb 25
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