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IRFR220
N-channel enhancement mode field effect transistor
Rev. 01 -- 14 August 2001 Product data
M3D300
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM1 technology.
Product availability:
IRFR220 in SOT428 (D-PAK).
2. Features
s Fast switching
s Low on-state resistance
s Surface mount package.
3. Applications
s Switched mode power supplies
s DC to DC converters.
4. Pinning information
Table 1: Pinning - SOT428 (D-PAK), simplified outline and symbol
Pin Description Simplified outline Symbol
1 gate (g)
mb
2 drain (d) [1] d
3 source (s)
mb mounting base; g
connected to drain (d)
2 s
MBB076
1 3
Top view MBK091
SOT428 (D-PAK)
[1] It is not possible to make connection to pin 2 of the SOT428 package.
1. TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Philips Semiconductors IRFR220
N-channel enhancement mode field effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) Tj = 25 to 150 ◦ Jabse Service Manual Search 2026 ◦ Jabse Pravopis ◦ onTap.bg ◦ Other service manual resources online : Fixya ◦ eServiceinfo