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PBHV8118T
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 01 -- 7 May 2010 Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
LED driver for LED chain module
LCD backlighting
Automotive power management
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 180 V
IC collector current - - 1 A
hFE DC current gain VCE = 10 V; [1] 100 250 -
IC = 50 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBHV8118T
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
3 3
2 emitter
3 collector 1
1 2
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBHV8118T - plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PBHV8118T LZ*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
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