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PBHV8540T
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 -- 14 January 2009 Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9040T.
1.2 Features
I High voltage
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I AEC-Q101 qualified
1.3 Applications
I Electronic ballast for fluorescent lighting
I LED driver for LED chain module
I LCD backlighting
I High Intensity Discharge (HID) front lighting
I Automotive motor management
I Hook switch for wired telecom
I Switch mode power supply
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCESM collector-emitter peak VBE = 0 V - - 500 V
voltage
VCEO collector-emitter voltage open base - - 400 V
IC collector current - - 0.5 A
hFE DC current gain VCE = 10 V; 100 200 -
IC = 50 mA
NXP Semiconductors PBHV8540T
500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
3 3
2 emitter
3 collector 1
1 2
2
sym021
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBHV8540T - plastic surface-mounted package; 3 leads SOT23
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PBHV8540T W4*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
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