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PBHV9050Z
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
Rev. 1 -- 19 August 2010 Product data sheet
1. Product profile
1.1 General description
PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
Medium power SMD plastic package
1.3 Applications
Electronic ballasts
LED driver for LED chain module
LCD backlighting
Automotive motor management
Flyback converters
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCESM collector-emitter peak VBE = 0 - - -500 V
voltage
VCEO collector-emitter voltage open base - - -500 V
IC collector current - - -0.25 A
hFE DC current gain VCE = -10 V; [1] 80 160 300
IC = -50 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBHV9050Z
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
4 2, 4
2 collector
3 emitter 1
4 collector
1 2 3 3
sym028
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBHV9050Z SC-73 plastic surface-mounted package with increased SOT223
heat sink; 4 leads
4. Marking
Table 4. Marking codes
Type number Marking code
PBHV9050Z V9050Z
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -500 V
VCEO collector-emitter voltage open base - -500 V
VCESM collector-emitter peak VBE = 0 - -500 V
voltage
VEBO emitter-base voltage open collector - -6 V
IC collector current - -0.25 A
ICM peak collector current single pulse; - -0.5 A
tp 1 ms
IBM peak base current single pulse; - -200 mA
tp 1 ms
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