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                    PBLS2024D
                    20 V, 1.8 A PNP BISS loadswitch
                    Rev. 02 -- 6 September 2009                                               Product data sheet




1. Product profile

          1.1 General description
              PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
              Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
              plastic package.

          1.2 Features
              I     Low VCEsat (BISS) and resistor-equipped transistor in one package
              I     Low threshold voltage (<1 V) compared to MOSFET
              I     Space-saving solution
              I     Reduction of component count
              I     AEC-Q101 qualified

          1.3 Applications
              I     Supply line switches
              I     Battery charger switches
              I     High-side switches for LEDs, drivers and backlights
              I     Portable equipment

          1.4 Quick reference data
              Table 1.      Quick reference data
              Symbol          Parameter                      Conditions            Min    Typ      Max    Unit
              TR1; PNP low VCEsat transistor
              VCEO            collector-emitter voltage      open base             -      -        -20    V
              IC              collector current                                    -      -        -1.8   A
              ICM             peak collector current         single pulse;         -      -        -3     A
                                                             tp  1 ms
              RCEsat          collector-emitter saturation   IC = -1.8 A;    [1]   -      78       117    m
                              resistance                     IB = -100 mA
              TR2; NPN resistor-equipped transistor
              VCEO            collector-emitter voltage      open base             -      -        50     V
              IO              output current                                       -      -        100    mA
              R1              bias resistor 1 (input)                              15.4   22       28.6   k
              R2/R1           bias resistor ratio                                  0.8    1        1.2

              [1]   Pulse test: tp  300 

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