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                    PBRP123YT
                    PNP 800 mA, 40 V BISS RET; R1 = 2.2 k, R2 = 10 k
                    Rev. 01 -- 17 December 2007                                                       Product data sheet




1. Product profile

          1.1 General description
              800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped
              Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic
              package.

              NPN complement: PBRN123YT.

          1.2 Features
              I 800 mA repetitive peak output current                I Low collector-emitter saturation voltage
                                                                       VCEsat
              I High current gain hFE                                I Reduces component count
              I Built-in bias resistors                              I Reduces pick and place costs
              I Simplifies circuit design                            I 

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