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                    PBSS2515E
                    15 V, 0.5 A NPN low VCEsat (BISS) transistor
                    Rev. 02 -- 21 April 2009                                           Product data sheet




1. Product profile

          1.1 General description
              NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small
              SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

              PNP complement: PBSS3515E.

          1.2 Features
              I     Low collector-emitter saturation voltage VCEsat
              I     High collector current capability IC and ICM
              I     High collector current gain (hFE) at high IC
              I     High efficiency due to less heat generation
              I     Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

          1.3 Applications
              I     DC-to-DC conversion
              I     MOSFET gate driving
              I     Motor control
              I     Charging circuits
              I     Low power switches (e.g. motors, fans)
              I     Portable applications

          1.4 Quick reference data
              Table 1.      Quick reference data
              Symbol       Parameter                   Conditions            Min   Typ      Max   Unit
              VCEO         collector-emitter voltage   open base             -     -        15    V
              IC           collector current                                 -     -        0.5   A
              ICM          peak collector current      single pulse;         -     -        1     A
                                                       tp  1 ms
              RCEsat       collector-emitter           IC = 500 mA;    [1]   -     300      500   m
                           saturation resistance       IB = 50 mA

              [1]   Pulse test: tp  300 

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