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                    PBSS305NX
                    80 V, 4.6 A NPN low VCEsat (BISS) transistor
                    Rev. 02 -- 8 December 2009                                               Product data sheet




1. Product profile

          1.1 General description
              NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
              (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

              PNP complement: PBSS305PX.

          1.2 Features
                    Low collector-emitter saturation voltage VCEsat
                    High collector current capability IC and ICM
                    High collector current gain (hFE) at high IC
                    High efficiency due to less heat generation
                    Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

          1.3 Applications
                    High-voltage DC-to-DC conversion
                    High-voltage MOSFET gate driving
                    High-voltage motor control
                    High-voltage power switches (e.g. motors, fans)
                    Automotive applications

          1.4 Quick reference data
              Table 1.     Quick reference data
              Symbol          Parameter                      Conditions            Min   Typ      Max   Unit
              VCEO            collector-emitter voltage      open base             -     -        80    V
              IC              collector current                                    -     -        4.6   A
              ICM             peak collector current         single pulse;         -     -        9.2   A
                                                             tp  1 ms
              RCEsat          collector-emitter saturation   IC = 4 A;       [1]   -     38       53    m
                              resistance                     IB = 200 mA

              [1]   Pulse test: tp  300 s;   0.02.
NXP Semiconductors                                                                                 PBSS305NX
                                                                         80 V, 4.6 A NPN low VCEsat (BISS) transistor



2. Pinning information
                     Table 2.      Pinning
                     Pin               Description                               Simplified outline   Symbol
                     1                 emitter
                                                                                                                            2
                     2                 collector
                     3                 base                                                                      3

                                                                                                                            1
                                                                                       3   2   1                     sym042




3. Ordering information
                     Table 3.      Ordering information
                     Type number          Package
                                          Name         Description                                                    Version
                     PBSS305NX            SC-62        plastic surface-mounted package; collector pad for good SOT89
                                                       heat transfer; 3 leads


4. Marking
                     Table 4.      Marking codes
                     Type number                                           Marking code[1]
                     PBSS305NX                                             *5F

                     [1]   * = -: made in Hong Kong
                           * = p: made in Hong Kong
                           * = t: made in Malaysia
                           * = W: made in China




PBSS305NX_2                                                                                            

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