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                    PBSS302NX
                    20 V, 5.3 A NPN low VCEsat (BISS) transistor
                    Rev. 02 -- 20 November 2009                                        Product data sheet




1. Product profile

          1.1 General description
              NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89
              (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

              PNP complement: PBSS302PX.

          1.2 Features
                    Low collector-emitter saturation voltage VCEsat
                    High collector current capability IC and ICM
                    High collector current gain (hFE) at high IC
                    High efficiency due to less heat generation
                    Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

          1.3 Applications
                    DC-to-DC conversion
                    MOSFET gate driving
                    Motor control
                    Charging circuits
                    Power switches (e.g. motors, fans)

          1.4 Quick reference data
              Table 1.     Quick reference data
              Symbol Parameter                        Conditions            Min   Typ      Max    Unit
              VCEO        collector-emitter voltage   open base             -     -        20     V
              IC          collector current                                 -     -        5.3    A
              ICM         peak collector current      single pulse;         -     -        10.6   A
                                                      tp  1 ms
              RCEsat      collector-emitter           IC = 4 A;       [1]   -     28       40     m
                          saturation resistance       IB = 200 mA

              [1]   Pulse test: tp  300 s;   0.02.
NXP Semiconductors                                                                               PBSS302NX
                                                                         20 V, 5.3 A NPN low VCEsat (BISS) transistor



2. Pinning information
                     Table 2.      Pinning
                     Pin               Description                             Simplified outline    Symbol
                     1                 emitter
                                                                                                                            2
                     2                 collector
                     3                 base                                                                      3

                                                                                                                            1
                                                                                     3   2   1                       sym042




3. Ordering information
                     Table 3.      Ordering information
                     Type number           Package
                                           Name          Description                                                  Version
                     PBSS302NX             SC-62         plastic surface-mounted package; collector pad for           SOT89
                                                         good heat transfer; 3 leads


4. Marking
                     Table 4.      Marking codes
                     Type number                             Marking code[1]
                     PBSS302NX                               *5C

                     [1]   * = -: made in Hong Kong
                           * = p: made in Hong Kong
                           * = t: made in Malaysia
                           * = W: made in China




PBSS302NX_2                                                                                            

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