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                    PBSS4041PX
                    60 V, 5 A PNP low VCEsat (BISS) transistor
                    Rev. 01 -- 1 April 2010                                              Product data sheet




1. Product profile

          1.1 General description
              PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
              flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.

              NPN complement: PBSS4041NX.

          1.2 Features and benefits
                    Very low collector-emitter saturation voltage VCEsat
                    High collector current capability IC and ICM
                    High collector current gain (hFE) at high IC
                    High energy efficiency due to less heat generation
                    AEC-Q101 qualified
                    Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

          1.3 Applications
                    Loadswitch
                    Battery-driven devices
                    Power management
                    Charging circuits
                    Power switches (e.g. motors, fans)

          1.4 Quick reference data
              Table 1.     Quick reference data
              Symbol         Parameter                   Conditions            Min   Typ      Max   Unit
              VCEO           collector-emitter voltage   open base             -     -        -60   V
              IC             collector current                                 -     -        -5    A
              ICM            peak collector current      single pulse;         -     -        -15   A
                                                         tp  1 ms
              RCEsat         collector-emitter           IC = -4 A;      [1]   -     40       60    m
                             saturation resistance       IB = -400 mA

              [1]   Pulse test: tp  300 s;   0.02.
NXP Semiconductors                                                                                                            PBSS4041PX
                                                                                                      60 V, 5 A PNP low VCEsat (BISS) transistor



2. Pinning information
                     Table 2.      Pinning
                     Pin               Description                                                            Simplified outline    Graphic symbol
                     1                 emitter
                                                                                                                                                            2
                     2                 collector
                     3                 base                                                                                                     3


                                                                                                                      3   2   1                             1
                                                                                                                                               006aaa231




3. Ordering information
                     Table 3.      Ordering information
                     Type number            Package
                                            Name                    Description                                                                     Version
                     PBSS4041PX             SC-62                   plastic surface-mounted package; 3 leads                                        SOT89


4. Marking
                     Table 4.      Marking codes
                     Type number                                                                      Marking code[1]
                     PBSS4041PX                                                                       *6G

                     [1]   * = -: made in Hong Kong
                           * = p: made in Hong Kong
                           * = t: made in Malaysia
                           * = W: made in China


5. Limiting values
                     Table 5.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol           Parameter                                     Conditions                                Min    Max                Unit
                     VCBO             collector-base voltage                        open emitter                              -      -60                V
                     VCEO             collector-emitter voltage                     open base                                 -      -60                V
                     VEBO             emitter-base voltage                          open collector                            -      -5                 V
                     IC               collector current                                                                       -      -5                 A
                     ICM              peak collector current                        single pulse;                             -      -15                A
                                                                                    tp  1 ms
                     IB               base current                                                                            -      -1                 A




PBSS4041PX_1                             All information provided in this document is subject to legal disclaimers.                  



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