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pbss4021nt


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                    PBSS4021NT
                    20 V, 4.3 A NPN low VCEsat (BISS) transistor
                    Rev. 01 -- 31 January 2010                                           Product data sheet




1. Product profile

          1.1 General description
              NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
              small Surface-Mounted Device (SMD) plastic package.

              PNP complement: PBSS4021PT.

          1.2 Features
                    Very low collector-emitter saturation voltage VCEsat
                    High collector current capability IC and ICM
                    High collector current gain (hFE) at high IC
                    High energy efficiency due to less heat generation
                    AEC-Q101 qualified
                    Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

          1.3 Applications
                    Loadswitch
                    Battery-driven devices
                    Power management
                    Charging circuits
                    Power switches (e.g. motors, fans)

          1.4 Quick reference data
              Table 1.     Quick reference data
              Symbol         Parameter                   Conditions            Min   Typ      Max   Unit
              VCEO           collector-emitter voltage   open base             -     -        20    V
              IC             collector current                                 -     -        4.3   A
              ICM            peak collector current      single pulse;         -     -        8     A
                                                         tp  1 ms
              RCEsat         collector-emitter           IC = 4 A;       [1]   -     36       50    m
                             saturation resistance       IB = 400 mA

              [1]   Pulse test: tp  300 s;   0.02.
NXP Semiconductors                                                                                   PBSS4021NT
                                                                          20 V, 4.3 A NPN low VCEsat (BISS) transistor



2. Pinning information
                     Table 2.      Pinning
                     Pin               Description                                    Simplified outline     Graphic symbol
                     1                 base
                                                                                                 3                                 3
                     2                 emitter
                     3                 collector                                                                        1
                                                                                          1              2
                                                                                                                                   2
                                                                                                                            sym021




3. Ordering information
                     Table 3.      Ordering information
                     Type number           Package
                                           Name           Description                                                        Version
                     PBSS4021NT            -              plastic surface-mounted package; 3 leads                           SOT23


4. Marking
                     Table 4.      Marking codes
                     Type number                                                Marking code[1]
                     PBSS4021NT                                                 *BH

                     [1]   * = -: made in Hong Kong
                           * = p: made in Hong Kong
                           * = t: made in Malaysia
                           * = W: made in China


5. Limiting values
                     Table 5.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol           Parameter                    Conditions                        Min      Max                Unit
                     VCBO             collector-base voltage       open emitter                      -        20                 V
                     VCEO             collector-emitter voltage    open base                         -        20                 V
                     VEBO             emitter-base voltage         open collector                    -        5                  V
                     IC               collector current                                              -        4.3                A
                     ICM              peak collector current       single pulse;                     -        8                  A
                                                                   tp  1 ms
                     IB               base current                                                   -        1                  A




PBSS4021NT_1                                                                                                  



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