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PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
Rev. 01 -- 1 April 2010 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS4032PX.
1.2 Features and benefits
Very low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 30 V
IC collector current - - 4.7 A
ICM peak collector current single pulse; - - 10 A
tp 1 ms
RCEsat collector-emitter IC = 4 A; [1] - 45 62.5 m
saturation resistance IB = 400 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS4032NX
30 V, 4.7 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 emitter
2
2 collector
3 base 3
1
3 2 1 sym042
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4032NX SC-62 plastic surface-mounted package; 3 leads SOT89
4. Marking
Table 4. Marking codes
Type number Marking code[1]
PBSS4032NX *6H
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base - 30 V
VEBO emitter-base voltage open collector - 5 V
IC collector current - 4.7 A
ICM peak collector current single pulse; - 10 A
tp 1 ms
IB base current - 1 A
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