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                    PBSS4032ND
                    30 V, 3.5 A NPN low VCEsat (BISS) transistor
                    Rev. 01 -- 30 January 2010                                           Product data sheet




1. Product profile

          1.1 General description
              NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)
              small Surface-Mounted Device (SMD) plastic package.

              PNP complement: PBSS4032PD.

          1.2 Features
                    Low collector-emitter saturation voltage VCEsat
                    Optimized switching time
                    High collector current capability IC and ICM
                    High collector current gain (hFE) at high IC
                    High energy efficiency due to less heat generation
                    AEC-Q101 qualified
                    Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

          1.3 Applications
                    DC-to-DC conversion
                    Battery-driven devices
                    Power management
                    Charging circuits

          1.4 Quick reference data
              Table 1.     Quick reference data
              Symbol         Parameter                   Conditions            Min   Typ      Max   Unit
              VCEO           collector-emitter voltage   open base             -     -        30    V
              IC             collector current                                 -     -        3.5   A
              ICM            peak collector current      single pulse;         -     -        6     A
                                                         tp  1 ms
              RCEsat         collector-emitter           IC = 4 A;       [1]   -     50       75    m
                             saturation resistance       IB = 400 mA

              [1]   Pulse test: tp  300 s;   0.02.
NXP Semiconductors                                                                           PBSS4032ND
                                                                      30 V, 3.5 A NPN low VCEsat (BISS) transistor



2. Pinning information
                     Table 2.   Pinning
                     Pin           Description                                   Simplified outline     Graphic symbol
                     1             collector
                                                                                        6   5       4                 1, 2, 5, 6
                     2             collector
                     3             base                                                                         3

                     4             emitter                                              1   2       3
                                                                                                                           4
                     5             collector
                                                                                                                        sym014
                     6             collector


3. Ordering information
                     Table 3.   Ordering information
                     Type number       Package
                                       Name           Description                                                       Version
                     PBSS4032ND        SC-74          plastic surface-mounted package; 6 leads                          SOT457


4. Marking
                     Table 4.   Marking codes
                     Type number                                            Marking code
                     PBSS4032ND                                             ZF


5. Limiting values
                     Table 5.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol       Parameter                    Conditions                       Min      Max                Unit
                     VCBO         collector-base voltage       open emitter                     -        30                 V
                     VCEO         collector-emitter voltage    open base                        -        30                 V
                     VEBO         emitter-base voltage         open collector                   -        5                  V
                     IC           collector current                                             -        3.5                A
                     ICM          peak collector current       single pulse;                    -        6                  A
                                                               tp  1 ms
                     IB           base current                                                  -        0.5                A




PBSS4032ND_1                                                                                             

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