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                    PBSS4032PT
                    30 V, 2.4 A PNP low VCEsat (BISS) transistor
                    Rev. 01 -- 18 December 2009                                          Product data sheet




1. Product profile

          1.1 General description
              PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
              small Surface-Mounted Device (SMD) plastic package.

              NPN complement: PBSS4032NT.

          1.2 Features
                    Low collector-emitter saturation voltage VCEsat
                    Optimized switching time
                    High collector current capability IC and ICM
                    High collector current gain (hFE) at high IC
                    High energy efficiency due to less heat generation
                    AEC-Q101 qualified
                    Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

          1.3 Applications
                    DC-to-DC conversion
                    Battery-driven devices
                    Power management
                    Charging circuits

          1.4 Quick reference data
              Table 1.     Quick reference data
              Symbol         Parameter                   Conditions            Min   Typ      Max    Unit
              VCEO           collector-emitter voltage   open base             -     -        -30    V
              IC             collector current                                 -     -        -2.4   A
              ICM            peak collector current      single pulse;         -     -        -5     A
                                                         tp  1 ms
              RCEsat         collector-emitter           IC = -2 A;      [1]   -     110      165    m
                             saturation resistance       IB = -200 mA

              [1]   Pulse test: tp  300 s;   0.02.
NXP Semiconductors                                                                               PBSS4032PT
                                                                         30 V, 2.4 A PNP low VCEsat (BISS) transistor



2. Pinning information
                     Table 2.      Pinning
                     Pin               Description                                Simplified outline     Graphic symbol
                     1                 base
                                                                                             3                                 3
                     2                 emitter
                     3                 collector                                                                    1
                                                                                      1              2
                                                                                                                               2
                                                                                                                        sym013




3. Ordering information
                     Table 3.      Ordering information
                     Type number           Package
                                           Name           Description                                                    Version
                     PBSS4032PT            -              plastic surface-mounted package; 3 leads                       SOT23


4. Marking
                     Table 4.      Marking codes
                     Type number                                           Marking code[1]
                     PBSS4032PT                                            *BN

                     [1]   * = -: made in Hong Kong
                           * = p: made in Hong Kong
                           * = t: made in Malaysia
                           * = W: made in China


5. Limiting values
                     Table 5.   Limiting values
                     In accordance with the Absolute Maximum Rating System (IEC 60134).
                     Symbol           Parameter                   Conditions                     Min      Max                Unit
                     VCBO             collector-base voltage      open emitter                   -        -30                V
                     VCEO             collector-emitter voltage   open base                      -        -30                V
                     VEBO             emitter-base voltage        open collector                 -        -5                 V
                     IC               collector current                                          -        -2.4               A
                     ICM              peak collector current      single pulse;                  -        -5                 A
                                                                  tp  1 ms
                     IB               base current                                               -        -0.5               A




PBSS4032PT_1                                                                                              

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