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PBSS4032PZ
30 V, 4.4 A PNP low VCEsat (BISS) transistor
Rev. 01 -- 31 March 2010 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power
SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4032NZ.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
Optimized switching time
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High energy efficiency due to less heat generation
AEC-Q101 qualified
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
DC-to-DC conversion
Battery-driven devices
Power management
Charging circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -30 V
IC collector current - - -4.4 A
ICM peak collector current single pulse; - - -10 A
tp 1 ms
RCEsat collector-emitter IC = -4 A; [1] - 58 86 m
saturation resistance IB = -400 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS4032PZ
30 V, 4.4 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
4 2, 4
2 collector
3 emitter 1
4 collector
1 2 3 3
sym028
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4032PZ SC-73 plastic surface-mounted package with increased SOT223
heat sink; 4 leads
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS4032PZ PB4032PZ
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - -30 V
VCEO collector-emitter voltage open base - -30 V
VEBO emitter-base voltage open collector - -5 V
IC collector current - -4.4 A
ICM peak collector current single pulse; - -10 A
tp 1 ms
IB base current - -1 A
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