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PBSS4160DPN
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
Rev. 03 -- 11 December 2009 Product data sheet
1. Product profile
1.1 General description
NPN/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Complementary MOSFET driver
Half and full bridge motor drivers
Dual low power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
TR1 (NPN)
VCEO collector-emitter voltage open base - - 60 V
IC collector current (DC) [1] - - 1 A
ICM peak collector current single pulse; tp 1 ms - - 2 A
RCEsat collector-emitter saturation IC = 1 A; IB = 100 mA [2] - 200 250 m
resistance
TR2 (PNP)
VCEO collector-emitter voltage open base - - -60 V
IC collector current (DC) [1] - - -900 mA
ICM peak collector current single pulse; tp 1 ms - - -2 A
RCEsat collector-emitter saturation IC = -1 A; IB = -100 mA [2] - 250 330 m
resistance
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[2] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS4160DPN
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1
1 2 3
5 base TR2
1 2 3
6 collector TR1
sym019
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4160DPN SC-74 plastic surface mounted package; 6 leads SOT457
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS4160DPN B4
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCBO collector-base voltage open emitter - 80 V
VCEO collector-emitter voltage open base - 60 V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC) NPN [1] - 870 mA
[2] - 1 A
PNP [1] - 770 mA
[2] - 900 mA
both [3] - 1 A
ICM peak collector current single pulse; tp 1 ms - 2 A
IB base current (DC) - 300 mA
IBM peak base current single pulse; tp 1 ms - 1 A
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