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PBSS4160DS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
Rev. 04 -- 11 December 2009 Product data sheet
1. Product profile
1.1 General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
PNP/PNP complement: PBSS5160DS.
1.2 Features
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Dual low power switches (e.g. motors, fans)
Automotive applications
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
VCEO collector-emitter voltage open base - - 60 V
IC collector current [1] - - 1 A
ICM peak collector current single pulse; - - 2 A
tp 1 ms
RCEsat collector-emitter saturation IC = 1 A; [2] - 200 250 m
resistance IB = 100 mA
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS4160DS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
6 5 4 6 5 4
2 base TR1
3 collector TR2
TR2
4 emitter TR2 TR1
1 2 3
5 base TR2
1 2 3
6 collector TR1
sym020
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS4160DS SC-74 plastic surface mounted package (TSOP6); 6 leads SOT457
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS4160DS B8
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 80 V
VCEO collector-emitter voltage open base - 60 V
VEBO emitter-base voltage open collector - 5 V
IC collector current [1] - 0.87 A
[2] - 1 A
[3] - 1 A
ICM peak collector current single pulse; tp 1 ms - 2 A
IB base current - 300 mA
IBM peak base current single pulse; tp 1 ms - 1 A
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