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                    PBSS5140T
                    40 V, 1 A PNP low VCEsat BISS transistor
                    Rev. 04 -- 29 July 2008                                              Product data sheet




1. Product profile

          1.1 General description
              PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)
              small Surface-Mounted Device (SMD) plastic package.

              NPN complement: PBSS4140T.

          1.2 Features
              I     Low collector-emitter saturation voltage VCEsat
              I     High collector current capability IC and ICM
              I     High collector current gain (hFE) at high IC
              I     High efficiency due to less heat generation

          1.3 Applications
              I     General-purpose switching and muting
              I     LCD backlighting
              I     Supply line switching circuits
              I     Battery-driven equipment (mobile phones, video cameras and handheld devices)

          1.4 Quick reference data
              Table 1.      Quick reference data
              Symbol         Parameter                   Conditions            Min   Typ      Max     Unit
              VCEO           collector-emitter voltage   open base             -     -        -40     V
              IC             collector current                                 -     -        -1      A
              ICM            peak collector current      single pulse;         -     -        -2      A
                                                         tp  1 ms
              RCEsat         collector-emitter           IC = -500 mA;   [1]   -     300      < 500   m
                             saturation resistance       IB = -50 mA

              [1]   Pulse test: tp  300 

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