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                    PBSS5160DS
                    60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
                    Rev. 03 -- 9 October 2008                                                     Product data sheet




1. Product profile

          1.1 General description
              PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor pair in a small
              SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

              NPN complement: PBSS4160DS.

          1.2 Features
              I     Low collector-emitter saturation voltage VCEsat
              I     High collector current capability IC and ICM
              I     High collector current gain (hFE) at high IC
              I     High efficiency due to less heat generation
              I     Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

          1.3 Applications
              I Dual low power switches (e.g. motors, fans)
              I Automotive applications

          1.4 Quick reference data
              Table 1.      Quick reference data
              Symbol          Parameter                      Conditions                 Min   Typ      Max   Unit
              VCEO            collector-emitter voltage      open base                  -     -        -60   V
              IC              collector current                                   [1]   -     -        -1    A
              ICM             peak collector current         single pulse;              -     -        -2    A
                                                             tp  1 ms
              RCEsat          collector-emitter saturation   IC = -1 A;           [2]   -     250      330   m
                              resistance                     IB = -100 mA

              [1]   Device mounted on a ceramic PCB, Al2O3, standard footprint.
              [2]   Pulse test: tp  300 

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