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PBSS5612PA
12 V, 6 A PNP low VCEsat (BISS) transistor
Rev. 01 -- 7 May 2010 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4612PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - -12 V
IC collector current - - -6 A
ICM peak collector current single pulse; - - -7 A
tp 1 ms
RCEsat collector-emitter IC = -6 A; [1] - 33 50 m
saturation resistance IB = -300 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS5612PA
12 V, 6 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
3 3
2 emitter
3 collector 1
2
sym013
1 2
Transparent top view
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5612PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
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