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PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
Rev. 01 -- 19 March 2010 Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
NPN complement: PBSS4630PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 30 V
IC collector current - - 6 A
ICM peak collector current single pulse; - - 7 A
tp 1 ms
RCEsat collector-emitter IC = 6 A; [1] - 39 58 m
saturation resistance IB = 300 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS5630PA
30 V, 6 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
3 3
2 emitter
3 collector 1
2
sym013
1 2
Transparent top view
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5630PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
no leads; three terminals; body 2 2 0.65 mm
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS5630PA AB
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 30 V
VCEO collector-emitter voltage open base - 30 V
VEBO emitter-base voltage open collector - 7 V
IC collector current - 6 A
ICM peak collector current single pulse; - 7 A
tp 1 ms
IB base current - 600 mA
Ptot total power dissipation Tamb 25 C [1] - 500 mW
[2] - 1 W
[3] - 1.4 W
[4] - 2.1 W
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