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PBSS8510PA
100 V, 5.2 A NPN low VCEsat (BISS) transistor
Rev. 1 -- 17 May 2010 Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra
thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS9410PA.
1.2 Features and benefits
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
Exposed heat sink for excellent thermal and electrical conductivity
Leadless small SMD plastic package with medium power capability
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - 100 V
IC collector current - - 5.2 A
ICM peak collector current single pulse; - - 6 A
tp 1 ms
RCEsat collector-emitter IC = 5.2 A; [1] - 48 65 m
saturation resistance IB = 260 mA
[1] Pulse test: tp 300 s; 0.02.
NXP Semiconductors PBSS8510PA
100 V, 5.2 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
3 3
2 emitter
3 collector 1
2
sym021
1 2
Transparent top view
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
PBSS8510PA HUSON3 plastic thermal enhanced ultra thin small outline package; SOT1061
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