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                     PH3120L
                     N-channel TrenchMOS logic level FET
                     Rev. 03 -- 30 March 2009                                               Product data sheet



1. Product profile

          1.1 General description
              Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. This product is designed and qualified for use in
              computing, communications, consumer and industrial applications only.

          1.2 Features and benefits
                     Higher operating power due to low                    Suitable for logic level gate drive
                     thermal resistance                                   sources
                     Low conduction losses due to low
                     on-state resistance

          1.3 Applications
                     DC-to-DC convertors                                  Portable equipment
                     Notebook computers                                   Switched-mode power supplies

          1.4 Quick reference data
              Table 1.     Quick reference
              Symbol Parameter                  Conditions                            Min     Typ    Max    Unit
              VDS         drain-source voltage Tj  25 

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