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                    PHB45NQ15T
                    N-channel TrenchMOS standard level FET
                    Rev. 02 -- 2 February 2009                                             Product data sheet



1. Product profile

          1.1 General description
              Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. This product is designed and qualified for use in
              computing, communications, consumer and industrial applications only.

          1.2 Features and benefits
                    Higher operating power due to low                    Simple gate drive required due to low
                    thermal resistance                                   gate charge
                    Low conduction losses due to low                     Suitable for high frequency
                    on-state resistance                                  applications due to fast switching
                                                                         characteristics

          1.3 Applications
                    AC-to-DC secondary side rectification                DC-to-DC converters

          1.4 Quick reference data
              Table 1.    Quick reference
              Symbol Parameter                 Conditions                            Min    Typ    Max    Unit
              VDS        drain-source voltage Tj  25 

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