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                     PHB29N08T
                     N-channel TrenchMOS standard level FET
                     Rev. 03 -- 13 October 2009                                            Product data sheet



1. Product profile

          1.1 General description
              Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. This product is designed and qualified for use in
              computing, communications, consumer and industrial applications only.

          1.2 Features and benefits
                     High noise immunity due to high gate                 Low conduction losses due to low
                     threshold voltage                                    on-state resistance

          1.3 Applications
                     Industrial motor control

          1.4 Quick reference data
              Table 1.      Quick reference
              Symbol Parameter                  Conditions                           Min    Typ   Max   Unit
              VDS         drain-source voltage Tj  25 

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