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Philips Semiconductors                                                                                       Product specification

TrenchMOSTM transistor                                                                                             PHB37N06T
Standard level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL                PARAMETER                               MAX.          UNIT
standard level field-effect power
transistor in a plastic envelope               VDS                   Drain-source voltage                     55             V
suitable for surface mounting. Using           ID                    Drain current (DC)                       37             A
'trench' technology the device                 Ptot                  Total power dissipation                 100            W
features very low on-state resistance          Tj                    Junction temperature                    175            

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