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                     PHD97NQ03LT
                     N-channel TrenchMOS logic level FET
                     Rev. 01 -- 24 March 2009                                            Product data sheet



1. Product profile

          1.1 General description
              Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. This product is designed and qualified for use in
              computing, communications, consumer and industrial applications only.

          1.2 Features and benefits
                     Fast switching                                    Low on-state resistance
                     Lead-free packing                                 Suitable for high frequency
                     Logic level threshold                             applications due to fast switching
                                                                       characteristics

          1.3 Applications
                     Computer motherboard high                         Switched-mode power supplies
                     frequency DC-to-DC convertors                     Voltage regulators

          1.4 Quick reference data
              Table 1.     Quick reference
              Symbol Parameter                  Conditions                         Min      Typ   Max   Unit
              VDS         drain-source voltage Tj  25 

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