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Philips Semiconductors                                                                                    Product Specification

PowerMOS transistor                                                                                          PHD12N10E


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                      SYMBOL            PARAMETER                                   MAX.     UNIT
field-effect power transistor in a
plastic envelope suitable for surface           VDS               Drain-source voltage                        100         V
mounting. The device is intended for            ID                Drain current (DC)                           14         A
use in Switched Mode Power                      Ptot              Total power dissipation                      75        W
Supplies (SMPS), motor control,                 Tj                Junction temperature                        175        

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