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phe13007


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Philips Semiconductors                                                                             Product specification

Silicon Diffused Power Transistor                                                                         PHE13007


GENERAL DESCRIPTION
The PHE13007 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.

QUICK REFERENCE DATA
 SYMBOL          PARAMETER                                        CONDITIONS                       TYP.   MAX.      UNIT
 VCESM           Collector-emitter voltage peak value             VBE = 0 V                          -    700        V
 VCBO            Collector-Base voltage (open emitter)                                               -    700        V
 VCEO            Collector-emitter voltage (open base)                                               -    400        V
 VEBO            Emitter-Base voltage (IB = 0)                                                       -     9         V
 IC              Collector current (DC)                                                              -     8         A
 ICM             Collector current peak value                                                        -    16         A
 Ptot            Total power dissipation                          Tmb  25



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