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                   PHKD3NQ10T
                   Dual N-channel TrenchMOS standard level FET
                   Rev. 02 -- 16 December 2010                                              Product data sheet




1. Product profile

          1.1 General description
              Dual standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
              plastic package using TrenchMOS technology. This product is designed and qualified for
              use in computing, communications, consumer and industrial applications only.

          1.2 Features and benefits
                     Low conduction losses due to low                    Suitable for use in compact designs
                     on-state resistance                                 due to low profile
                     Suitable for high frequency
                     applications due to fast switching
                     characteristics

          1.3 Applications
                     DC-to-DC converters                                 Motor and relay drivers

          1.4 Quick reference data
              Table 1.     Quick reference data
              Symbol         Parameter                    Conditions                    Min    Typ   Max Unit
              VDS            drain-source voltage         Tj  25 

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