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                     PHKD13N03LT
                     Dual N-channel TrenchMOS logic level FET
                     Rev. 03 -- 27 April 2010                                                Product data sheet



1. Product profile

          1.1 General description
              Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
              package using TrenchMOS technology. This product is designed and qualified for use in
              computing, communications, consumer and industrial applications only.

          1.2 Features and benefits
                     Low conduction losses due to low                    Suitable for high frequency
                     on-state resistance                                 applications due to fast switching
                     Simple gate drive required due to low               characteristics
                     gate charge

          1.3 Applications
                     DC-to-DC convertors                                 Notebook computers
                     Lithium-ion battery applications                    Portable equipment

          1.4 Quick reference data
              Table 1.       Quick reference data
              Symbol           Parameter              Conditions                         Min    Typ   Max Unit
              VDS              drain-source voltage   Tj  25 

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