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Philips Semiconductors                                                                              Objective specification

PowerMOS transistor                                                                                      PHP4N50E


GENERAL DESCRIPTION                      QUICK REFERENCE DATA
N-channel enhancement mode                 SYMBOL         PARAMETER                                     MAX.      UNIT
field-effect power transistor in a
plastic envelope featuring high            VDS            Drain-source voltage                           500        V
avalanche energy capability, stable        ID             Drain current (DC)                             5.3        A
blocking voltage, fast switching and       Ptot           Total power dissipation                        100        W
high thermal cycling performance           RDS(ON)        Drain-source on-state resistance               1.5        
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.

PINNING - TO220AB                        PIN CONFIGURATION                        SYMBOL
  PIN            DESCRIPTION                                                                             d
                                                         tab

    1    gate

    2    drain
                                                                                              g
    3    source
  tab    drain
                                                               1 23                                      s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL PARAMETER                              CONDITIONS                                    MIN.       MAX.      UNIT
 VDS        Drain-source voltage                                                              -          500        V
 VDGR       Drain-gate voltage                 RGS = 20 k                                     -          500        V
 

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