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php50n06_1


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Philips Semiconductors                                                                             Product specification

PowerMOS transistor                                                                                       PHP50N06


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                  SYMBOL        PARAMETER                                       MAX.        UNIT
field-effect power transistor in a
plastic envelope.                           VDS           Drain-source voltage                              60          V
The device is intended for use in           ID            Drain current (DC)                                52          A
Switched Mode Power Supplies                Ptot          Total power dissipation                          150         W
(SMPS), motor control, welding,             Tj            Junction temperature                             175



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