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php12n10e_1


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Philips Semiconductors                                                                                    Product Specification

PowerMOS transistor                                                                                             PHP12N10E


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                      SYMBOL             PARAMETER                                    MAX.         UNIT
field-effect power transistor in a
plastic envelope. The device is                 VDS                Drain-source voltage                          100            V
intended for use in Switched Mode               ID                 Drain current (DC)                             14            A
Power Supplies (SMPS), motor                    Ptot               Total power dissipation                        75           W
control, welding, DC/DC and AC/DC               Tj                 Junction temperature                          175           



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