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php20n06e_1


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Philips Semiconductors                                                                                          Product specification

PowerMOS transistor                                                                                                   PHP20N06E


GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode                             SYMBOL              PARAMETER                                  MAX.        UNIT
field-effect power transistor in a plastic
envelope.                                              VDS                 Drain-source voltage                        60           V
The device is intended for use in                      ID                  Drain current (DC)                          22           A
Switched Mode Power Supplies                           Ptot                Total power dissipation                     75          W
(SMPS), motor control, welding, DC/DC                  Tj                  Junction temperature                       175



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