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Philips Semiconductors                                                                                  Product specification

PowerMOS transistor                                                                                            PHP3055E


GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL      PARAMETER                                          MAX.         UNIT
field-effect power transistor in a
plastic envelope featuring high                VDS         Drain-source voltage                                60            V
avalanche energy capability, stable            ID          Drain current (DC)                                  12            A
blocking voltage, fast switching and           Ptot        Total power dissipation                             50            W
high thermal cycling performance               RDS(ON)     Drain-source on-state resistance                   0.15           
with low thermal resistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.

PINNING - TO220AB                            PIN CONFIGURATION                      SYMBOL
  PIN               DESCRIPTION                                                                               d
                                                          tab

       1    gate

       2    drain
                                                                                                   g
       3    source
   tab      drain
                                                                1 23                                          s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL PARAMETER                               CONDITIONS                                       MIN.         MAX.         UNIT
 ID            Continuous drain current         Tmb = 25 

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