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pht6n06lt_2


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Philips Semiconductors                                                                               Product specification

TrenchMOSTM transistor                                                                                      PHT6N06LT
Logic level FET

GENERAL DESCRIPTION                              QUICK REFERENCE DATA
N-channel enhancement mode                 SYMBOL       PARAMETER                                    MAX.          UNIT
logic level field-effect power
transistor in a plastic envelope           VDS          Drain-source voltage                           55            V
suitable for surface mounting.             ID           Drain current (DC) Tsp = 25 



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