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pht6n03t_2


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Philips Semiconductors                                                                               Product specification

TrenchMOSTM transistor                                                                                        PHT6N03T
Standard level FET

GENERAL DESCRIPTION                            QUICK REFERENCE DATA
N-channel enhancement mode                      SYMBOL        PARAMETER                                MAX.         UNIT
standard level field-effect power
transistor in a plastic envelope                VDS           Drain-source voltage                       30           V
suitable for surface mounting. Using            ID            Drain current (DC) Tsp = 25



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