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Philips Semiconductors                                                                                Product specification

TrenchMOSTM transistor                                                                                      PHT8N06LT
Logic level FET

GENERAL DESCRIPTION                           QUICK REFERENCE DATA
N-channel enhancement mode logic               SYMBOL        PARAMETER                                MAX.          UNIT
level field-effect power transistor in a
plastic envelope suitable for surface          VDS           Drain-source voltage                      55             V
mounting. The device features very             ID            Drain current                            7.5             A
low on-state resistance and has                Ptot          Total power dissipation                  1.8            W
integral zener diodes giving ESD               Tj            Junction temperature                     150            

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