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Philips Semiconductors                                                                                  Product specification

PowerMOS transistor                                                                                               PHW7N60


GENERAL DESCRIPTION                          QUICK REFERENCE DATA
N-channel enhancement mode                     SYMBOL         PARAMETER                                       MAX.         UNIT
field-effect power transistor in a
plastic envelope featuring high                VDS            Drain-source voltage                            600            V
avalanche energy capability, stable            ID             Drain current (DC)                               7             A
off-state     characteristics,    fast         Ptot           Total power dissipation                         147            W
switching and high thermal cycling             RDS(ON)        Drain-source on-state resistance                1.2            
performance with low thermal
resistance. Intended for use in
Switched Mode Power Supplies
(SMPS), motor control circuits and
general       purpose        switching
applications.

PINNING - SOT429 (TO247)                     PIN CONFIGURATION                        SYMBOL
  PIN               DESCRIPTION                                                                               d

       1    gate
       2    drain
                                                                                                   g
       3    source
   tab      drain                                         1    2    3
                                                                                                              s


LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
 SYMBOL PARAMETER                               CONDITIONS                                       MIN.         MAX.         UNIT
 ID            Continuous drain current         Tmb = 25 

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